Display unit and electronic apparatus

ABSTRACT

A display unit includes: a light-emitting section including a light-emitting element that has a first electrode, an organic layer including a light-emitting layer, and a second electrode in this order; and a reflector that is provided at a periphery of the light-emitting section to reflect light from the light-emitting section, and has a conductive layer, the conductive layer being electrically coupled to the second electrode of the light-emitting element.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a continuation application of U.S. patentapplication Ser. No. 15/502,258, filed Feb. 7, 2017, which is a NationalStage Entry of PCT/JP2015/071593, filed Jul. 30, 2015, and claims thebenefit of Japanese Priority Patent Application JP 2014-166662 filedAug. 19, 2014, the entire content of which is incorporated herein byreference.

TECHNICAL FIELD

The present technology relates to a display unit and an electronicapparatus that include light-emitting elements each having an organiclayer.

BACKGROUND ART

An organic EL (Electroluminescence) display with use of self-emittingtype light-emitting elements that include organic layers thereon has awider viewing angle as compared with a liquid crystal display, andfurther has sufficient response performance to high-definition andhigh-speed video signals.

For the organic EL display, as a method of improving light extractionefficiency, there is proposed a method that provides a reflectorstructure at a periphery of a light-emitting section in whichlight-emitting elements are provided (for example, see PTL 1).

CITATION LIST Patent Literature

[PTL 1] Japanese Unexamined Patent Application Publication No.2011-023240

SUMMARY OF THE INVENTION

In such an organic EL display, it is desired to improve the lightextraction efficiency, and to improve luminance by increasing a signalamount (for example, a current amount) to be transmitted to thelight-emitting elements.

Accordingly, it is desirable to provide a display unit and an electronicapparatus that have high luminance.

A display unit according to an embodiment of the present technologyincludes: a light-emitting section including a light-emitting elementthat has a first electrode, an organic layer including a light-emittinglayer, and a second electrode in this order; and a reflector that isprovided at a periphery of the light-emitting section to reflect lightfrom the light-emitting section, and has a conductive layer, theconductive layer being electrically coupled to the second electrode ofthe light-emitting element.

An electronic apparatus according to an embodiment of the presenttechnology includes the above-described display unit.

In the display unit and the electronic apparatus according to therespective embodiments of the present technology, since the conductivelayer of the reflector is electrically coupled to the second electrodeof the light-emitting element, the conductive layer of the reflector isused along with the second electrode, and a signal is transmitted to thelight-emitting element.

According to the display unit and the electronic apparatus of therespective embodiments of the present technology, the conductive layerof the reflector is electrically coupled to the second electrode of thelight-emitting element, which makes it possible to increase an amount ofsignals flowing through the light-emitting element. This allows forimprovement in luminance. It is to be noted that effects described hereare non-limiting, and may be one or more of effects described in thepresent disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a configuration of a display unit according toan embodiment of the present technology.

FIG. 2 is an enlarged plan view of a portion of the display unitillustrated in FIG. 1.

FIG. 3 is a diagram illustrating a cross-sectional configuration takenalong a line III-III illustrated in FIG. 2.

FIG. 4 is a diagram illustrating a cross-sectional configuration takenalong a line IV-IV illustrated in FIG. 2.

FIG. 5 is a plan view of a configuration of a conductive layer of areflector illustrated in FIG. 3 and FIG. 4.

FIG. 6 is a plan view of a configuration of a first dielectric layer ofthe reflector illustrated in FIG. 3 and FIG. 4.

FIG. 7 is a plan view of a configuration of a second dielectric layer ofthe reflector illustrated in FIG. 3 and FIG. 4.

FIG. 8 is a plan view of another configuration of the first dielectriclayer illustrated in FIG. 6.

FIG. 9 is a plan view of another configuration of the second dielectriclayer illustrated in FIG. 7.

FIG. 10 is a schematic diagram illustrating an overall configuration ofthe display unit illustrated in FIG. 1.

FIG. 11 is a diagram illustrating an example of a pixel driving circuitillustrated in FIG. 10.

FIG. 12 is a cross-sectional view of an example of a manufacturingprocess of the display unit illustrated in FIG. 3.

FIG. 13 is a cross-sectional view of a process following the processillustrated in FIG. 12.

FIG. 14 is a cross-sectional view of a process following the processillustrated in FIG. 13.

FIG. 15 is a cross-sectional view of a process following on the processillustrated in FIG. 14.

FIG. 16 is a plan view of a configuration of a display unit according toa modification example 1.

FIG. 17 is a diagram illustrating a cross-sectional configuration takenalong a line XVII-XYII illustrated in FIG. 16.

FIG. 18 is a diagram illustrating a cross-sectional configuration takenalong a line XVIII-XYIII illustrated in FIG. 16.

FIG. 19 is a plan view of a configuration of a first dielectric layer ofa reflector illustrated in FIG. 17 and FIG. 18.

FIG. 20 is a plan view of a configuration of a second dielectric layerof the reflector illustrated in FIG. 17 and FIG. 18.

FIG. 21 is a plan view of another configuration of the first dielectriclayer illustrated in FIG. 19.

FIG. 22 is a plan view of another configuration of the second dielectriclayer illustrated in FIG. 20.

FIG. 23 is a plan view of a configuration of a first dielectric layer ofa display unit according to a modification example 2.

FIG. 24 is a plan view of a configuration of a second dielectric layerof the display unit according to the modification example 2.

FIG. 25 is a plan view of another example of a configuration of thefirst dielectric layer illustrated in FIG. 23.

FIG. 26 is a plan view of another example of a configuration of thesecond dielectric layer illustrated in FIG. 24.

FIG. 27 is a cross-sectional view of a configuration of a display unitaccording to a modification example 3.

FIG. 28 is a cross-sectional view of a configuration of a display unitaccording to a modification example 4.

FIG. 29 is a perspective view of an application example of the displayunit illustrated in FIG. 1 and other related figures.

FIG. 30 is a plan view of another example of a configuration of thefirst dielectric layer illustrated in FIG. 8 and other related figures.

FIG. 31 is a plan view of another example of a configuration of thesecond dielectric layer illustrated in FIG. 9 and other related figures.

MODES FOR CARRYING OUT THE INVENTION

Hereinafter, some embodiments of the present technology are described indetail with reference to the drawings. It is to be noted thatdescription is given in the following order.

1. Embodiment (a display unit: an example where a reflector includes asupport, a conductive layer, and two dielectric layers)2. Modification Example 1 (a disposition example 1 of connection holesof a dielectric layer)3. Modification Example 2 (a disposition example 2 of connection holesof a dielectric layer)4. Modification Example 3 (an example where a reflector includes asupport, a conductive layer, and a single dielectric layer)5. Modification Example 4 (an example where a reflector includes aconductive layer and a single dielectric layer)

6. Application Examples Example Embodiment [Configuration of DisplayUnit 1]

FIG. 1 schematically illustrates a planar configuration of an organic ELdisplay unit (display unit 1) according to an embodiment of the presenttechnology. The display unit 1 may include a substrate 11 having adisplay region 110A at a central portion and a peripheral region 110Boutside the display region 11A. The peripheral region 110B may surroundthe display region 110A, and a common electrode 12C may be provided inthe peripheral region 110B on the substrate 11. The common electrode 12Cmay be provided, for example, in a frame shape surrounding therectangular display region 110A. The common electrode 12C may be coupledto a common power source line (GND), for example. It is only necessaryto provide the common electrode 12C in the peripheral region 110B, andthe common electrode 12C may not surround the display region 110A.

FIG. 2 is an enlarged view of a portion P in FIG. 1. The display region110A on the substrate 11 may be provided with a plurality oflight-emitting sections 10. The light-emitting sections 10 may eachinclude, for example, a red light-emitting section 10R that emits redlight, a green light-emitting section 10G that emits green light, and ablue light-emitting section 10B that emits blue light. The redlight-emitting sections 10R, the green light-emitting sections 10G, andthe blue light-emitting sections 10B may each have, for example, arectangular shape, and may be disposed in a matrix pattern in a rowdirection (X direction) and in a column direction (Y direction).Alternatively, the red light-emitting section 10R, the greenlight-emitting section 10G, and the blue light-emitting section 10B mayeach have, for example, a circular shape (not illustrated).

FIG. 3 illustrates a cross-sectional configuration taken along a lineIII-III illustrated in FIG. 2, and FIG. 4 illustrates a cross-sectionalconfiguration taken along a line IV-IV illustrated in FIG. 2.

The display unit 1 may have a TFT (Thin-Film Transistor) layer 12 and aninterlayer insulating film 13 on the substrate 11. In each of the redlight-emitting sections 10R, the green light-emitting sections 10G, andthe blue light-emitting sections 10B, a light-emitting element 20 may beprovided on the interlayer insulating film 13. At a periphery of each ofthe red light-emitting sections 10R, the green light-emitting sections10G, and the blue light-emitting sections 10B, a reflector 30 may beprovided on the interlayer insulating film 13. FIG. 3 does notillustrate the red light-emitting sections 10R; however, thelight-emitting element 20 of each of the red light-emitting sections 10Rmay have a configuration similar to a configuration of each of thelight-emitting section 10G and the blue light-emitting section 10B. Thelight-emitting element 20 has a first electrode 21, an organic layer 22including a light-emitting layer, and a second electrode 23 in orderfrom a position close to the interlayer insulating film 13. Aninter-pixel insulating film 24 may be provided between adjacent two ofthe light-emitting elements 20. The reflector 30 may have a support 31,a conductive layer 32, a first dielectric layer 33, and a seconddielectric layer 34 in order from a position close to the interlayerinsulating film 13. The light-emitting elements 20 and the reflector 30may be covered with a filler layer 40, and may be sealed between thesubstrate 11 and a sealing substrate 60 having a CF (Color Filter) layer50. Such a display unit 1 may be, for example, a top-emission typedisplay unit, in which light generated in the light-emitting element 20is taken out of the sealing substrate 60.

The substrate 11 may be made of, for example, a glass or plasticmaterial that makes it possible to block permeation of moisture (watervapor) and oxygen. The substrate 11 may be a support in which aplurality of pixels 5 are disposed to be arrayed on one principalsurface thereof. Examples of a constituent material of the substrate 11may include a glass substrate such as high-strain-point glass, sodaglass (Na₂O.CaO.SiO₂), borosilicate glass (Na₂O.B₂O₃.SiO₂), forsterite(2MgO.SiO₂), and lead glass (Na₂O.PbO.SiO₂); a quartz substrate; or asilicon substrate. The substrate 11 may be configured by providing aninsulating film on a surface of one of such a glass substrate, quartzsubstrate, and silicon substrate. Alternatively, it may be possible touse a film or a sheet made of a metallic foil or a resin for thesubstrate 11. Examples of the resin may include an organic polymer suchas polymethylmethacrylate (polymethacrylic acid methyl, PMMA), polyvinylalcohol (PVA), polyvinyl phenol (PVP), polyether sulfone (PES),polyimide, polycarbonate, polyethylene terephthalate (PET), andpolyethylene naphthalate (PEN). It is to be noted that, in thetop-emission type, light is taken out of the sealing substrate 60 to behereinafter described, and therefore the substrate 11 may be made ofeither a permeable material or a non-permeable material. The sealingsubstrate 60 may use a material that is the same as or different fromthe material of the substrate 11. Further, the substrate 11 may be madeof a flexible material.

The TFT layer 12 may have a stacked structure of a gate insulating filmand a planarizing layer, for example. A drive transistor Tr1 and a writetransistor Tr2 that configure a pixel driving circuit (later-describedpixel driving circuit 140 in FIG. 10) may be formed in the TFT layer 12.Further signal lines (later-described signal lines 120A in FIG. 10),scan lines (later-described scan lines 130A in FIG. 10), and the commonelectrode 12C may be embedded in the TFT layer 12. Specifically, gateelectrodes of the drive transistor Tr1 and the write transistor Tr2 maybe formed on the substrate 11, and such gate electrodes may be coveredcollectively with the gate insulating film. A semiconductor layer, asource electrode, and a drain electrode in each of the drive transistorTr1 and the write transistor Tr2 may be formed on the gate insulatingfilm.

The planarizing layer that is stacked on the gate insulating film may beprovided to planarize a surface of the TFT layer 12 mainly, and may bemade of an insulating resin material such as polyimide, for example. Ifsufficient flatness is obtained with use of the gate insulating film,the planarizing layer may be omitted alternatively.

The first electrode 21 may also serve as a reflective layer, forexample, and may preferably include a material having high reflectanceand a high hole-injecting property. For example, a conductive materialwith a thickness within a range of 100 nm to 300 nm both inclusive maybe used for such a first electrode 21. Examples of a constituentmaterial for the first electrode 21 may include simple substances ofmetal elements such as chromium (Cr), gold (Au), platinum (Pt), nickel(Ni), copper (Cu), molybdenum (Mo), tungsten (W), titanium (Ti),tantalum (Ta), aluminum (Al), iron (Fe), and silver (Ag), and alloys ofthe metal elements. The first electrode 21 may be configured by stackinga plurality of such metallic films. Alternatively, the first electrode21 may be configured with use of a conductive material having a highlight-transmission property, and a reflective layer may be providedbetween the substrate 11 and the first electrode 21. The first electrode21 that is provided in the light-emitting section 10B may beelectrically coupled to the drive transistor Tr1 of the TFT layer 12 viaa connection hole HB that is provided in the interlayer insulating film13, and the first electrode 21 that is provided in the light-emittingsection 10G may be electrically coupled to the drive transistor Tr1 ofthe TFT layer 12 via a connection hole HG that is provided in theinterlayer insulating film 13.

The inter-pixel insulating film 24 may serve to assure an insulationproperty between the first electrode 21 and the second electrode 23, andto segment and separate a light-emitting region each of thelight-emitting elements 20. The inter-pixel insulating film 24 may bemade of a resin material such as polyimide, an acrylic resin, or anovolac-based resin. As an alternative, the inter-pixel insulating film24 may be configured by stacking an inorganic insulating material suchas silicon oxide (SiO₂) and silicon nitride (Si₃N₄), and a resinmaterial.

The organic layer 22 is provided between the first electrode 21 and thesecond electrode 23. The organic layer 22 has an identical structureirrespective of emission colors of the light-emitting sections 10 (redlight-emitting section 10R, green light-emitting section 10G, and bluelight-emitting section 10B), and may be configured, for example, in sucha manner that a hole injection layer, a hole transport layer, alight-emitting layer, an electron transport layer, and an electroninjection layer are stacked in this order from a position close to thefirst electrode 21. Applying an electric field causes some of holesinjected from the first electrode 21 via the hole injection layer andthe hole transport layer and some of electrons injected from the secondelectrode 23 via the electron injection layer and the electron transportlayer to be recombined in the light-emitting layer, resulting ingeneration of light. The organic layer 22 may be, for example, common toall of the light-emitting elements 20 to cover the reflector 30.

The hole injection layer may be a buffer layer to improve the holeinjection efficiency by allowing holes (carriers) to pass therethrough,and to prevent leakage. The hole injection layer may have, for example,a thickness of 5 nm to 300 nm both inclusive, and may includehexaazatriphenylene derivative that is represented by ChemicalExpression 1 or Chemical Expression 2.

[Chemical Expression 1]

(In Chemical Expression 1, each of R1 to R6 is a substituent group thatis independently selected from hydrogen, a halogen, a hydroxyl group, anamino group, an arylamino group, a substituted or unsubstituted carbonylgroup having 20 or less carbons, a substituted or unsubstituted carbonylester group having 20 or less carbons, a substituted or unsubstitutedalkyl group having 20 or less carbons, a substituted or unsubstitutedalkenyl group having 20 or less carbons, a substituted or unsubstitutedalkoxyl group having 20 or less carbons, a substituted or unsubstitutedaryl group having 30 or less carbons, a substituted or unsubstitutedheterocyclic group having 30 or less carbons, a nitrile group, a cyanogroup, a nitro group, and a silyl group, adjacent Rm (m is 1 to 6) areoptionally bonded to one another through a ring structure, and each ofX1 to X6 is an independent carbon atom or nitrogen atom.)

[Chemical Expression 2]

The hole transport layer may serve to improve efficiency of holetransport to the light-emitting layer. The hole transport layer may havea thickness of about 40 nm, and may be made of 4,4′,4″-tris(3-methylphenyl phenylamino) triphenylamine (m-MTDATA) orα-naphthylphenyldiamine (αNPD). Any material having the hole transportfunction may be selected for the hole injection layer.

The light-emitting layer is a light-emitting layer for white lightemission, and may have, for example, a red light-emitting layer, a greenlight-emitting layer, and a blue light-emitting layer (none of them areillustrated) that are provided to be stacked between the first electrode21 and the second electrode 23. The red light-emitting layer, the greenlight-emitting layer, and the blue light-emitting layer respectivelyemit red light, green light, and blue light through recombination ofholes and electrons.

The red light-emitting layer may include, for example, one or more kindsof a red light-emitting material, a hole transporting material, anelectron transporting material, and a positive and negative chargetransporting material. The red light-emitting material may be eitherfluorescent or phosphorescent. The red light-emitting layer may have,for example, a thickness of about 5 nm, and may be made of a material inwhich 2,6-bis [(4′-methoxydiphenylamino) styryl]-1,5-dicyanonaphthalene(BSN) is mixed with 4,4-bis (2,2-diphenylvinyl) biphenyl (DPVBi) at arate of 30% by weight.

The green light-emitting layer may include, for example, one or morekinds of a green light-emitting material, a hole transporting material,an electron transporting material, and a positive and negative chargetransporting material. The green light-emitting material may be eitherfluorescent or phosphorescent. The green light-emitting layer may have,for example, a thickness of about 10 nm, and may made of a material inwhich coumarin 6 is mixed with DPVBi at a rate of 5% by weight.

The blue light-emitting layer may include, for example, one or morekinds of a blue light-emitting material, a hole transporting material,an electron transporting material, and a positive and negative chargetransporting material. The blue light-emitting material may be eitherfluorescent or phosphorescent. The blue light-emitting layer may have,for example, a thickness of about 30 nm, and may made of a material inwhich 4,4′-bis [2-{4-(N,N-diphenylamino) phenyl} vinyl] biphenyl(DPAVBi) at a rate of 2.5% by weight.

The electron transport layer may serve to improve efficiency of electrontransport to the light-emitting layer, and may be made of, for example,8-hydroxyquinoline aluminum (Alq3) having a thickness of about 20 nm.The electron injection layer may be intended to improve the efficiencyof electron injection into the light-emitting layer 16, and may be madeof, for example, LiF or Li₂O having a thickness of about 0.3 nm.

The second electrode 23 makes a pair with the first electrode 21 withthe organic layer 22 in between, and is provided common to all of thelight-emitting elements 20 on the electron injection layer in a state ofbeing insulated from the first electrode 21. The second electrode 23 mayinclude, for example, a transparent material having a light-transmissionproperty. Specifically, an alloy material of aluminum (Al), magnesium(Mg), silver (Ag), calcium (Ca), or sodium (Na) may be usable for thesecond electrode 23. In particular, an alloy of magnesium and silver(Mg—Ag alloy) may be preferable because the Mg—Ag alloy in a thin filmform combines conductivity with small absorptivity. A ratio of magnesiumto silver in the Mg—Ag alloy is not limited specifically; however, afilm thickness ratio of Mg to Ag may be preferably within a range of20:1 to 1:1. Alternatively, for a material of the second electrode 23,an alloy of aluminum (Al) and lithium (Li) (Al—Li alloy) may be usable,or a material such as indium tin oxide (ITO), zinc oxide (ZnO),alumina-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indiumzinc oxide (IZO), indium titanium oxide (ITiO), or indium tungsten oxide(IWO) may be usable. Specifically, for example, the Mg—Ag alloy having athickness within a range of 10 nm to 30 nm both inclusive, or IZO havinga thickness within a range of 20 nm to 200 nm both inclusive may beusable for the second electrode 23. As with the organic layer 22, thesecond electrode 23 may be, for example, common to all of thelight-emitting elements 20 to cover the reflector 30.

The reflector 30 is provided to surround circumferences of thelight-emitting sections 10, and reflects light that is generated by thelight-emitting elements 20. Providing such a reflector 30 enhancesextraction efficiency of the light that is generated by thelight-emitting elements 20, thereby improving luminance of the displayunit 1. The support 31 of the reflector 30 is provided on theinter-pixel insulating film 24. The support 31 may serve to shape thereflector 30 in a desired form, and may be shaped in a bulkhead formthat surrounds the light-emitting sections 10. A thickness (width) ofthe support 31 may be, for example, greater at a position closer to theinter-pixel insulating film 24, and may become smaller as the support 31comes closer to the sealing substrate 60. In other words, the support 31may be shaped in such a manner that a cross-sectional shape thereof hasa tapered form. Providing such a support 31 (reflector 30) having across-sectional surface of a tapered shape makes it possible to improvelight extraction efficiency from the sealing substrate 60 side. Thesupport 31 may be made of, for example, an ultraviolet curable resin ora thermosetting resin. Alternatively, a material similar to aconstituent material for the above-described inter-pixel insulating film24 may be usable for the support 31, or the support 31 and theinter-pixel insulating film 24 may be integrated together. For example,when the first electrode 21 has a circular shape with a radius of 10 μm,a height (a distance in Z direction) of the support 31 may be, forexample, 10 μm. The height of the support 31 may be adjusted asappropriate depending on a size, shape, pitch, and any other factor ofthe first electrode 21.

The conductive layer 32 may have, for example, a thickness within arange of 50 nm to 200 nm both inclusive, and may cover the support 31 tobe tailored to the shape of the support 31. The conductive layer 32 mayserve to efficiently reflect the light from the light-emitting sections10 toward display surface side, and may be preferably made of a metallicmaterial having high reflectance for the light that is generated by thelight-emitting elements 20. Specifically, a constituent material for theconductive layer 32 may preferably include silver (Ag) or aluminum (Al)or both. Alternatively, the conductive layer 32 may be configured usinga simple substance of silver or aluminum, or the conductive layer 32 maybe configured using an alloy that contains a mixture of silver andaluminum as a major ingredient. In the present embodiment, theconductive layer 32 may be electrically coupled to the second electrode23 of the light-emitting element 20. As will hereinafter be described indetail, this increases an amount of signals flowing through thelight-emitting elements 20, thereby improving the luminance of thelight-emitting elements 20.

FIG. 5 illustrates a planar shape of the conductive layer 32. The singleconductive layer 32 may be provided continuously in the display unit 1.In the display region 110A of the substrate 11, a plurality of apertures32E may be provided in the conductive layer 32. Each of the apertures32E may be, for example, in a rectangular shape, and may be provided ata location overlapping with the light-emitting section 10. In theaperture 32E, an end surface of the conductive layer 32 may be coveredwith the first dielectric layer 33, the second dielectric layer 34, andthe inter-pixel insulating film 24, and the conductive layer 32 may beinsulated from the first electrode 21. The conductive layer 32 mayextend to the peripheral region 110B on the substrate 11, and may beelectrically coupled to the common electrode 12C through a connectionhole HC that is provided in the interlayer insulating film 13 of theperipheral region 110B (FIG. 3). In other words, the second electrode 23of the light-emitting element 20 may be electrically coupled to thecommon electrode 12C through the conductive layer 32.

The first dielectric layer 33 and the second dielectric layer 34 thatare stacked on the conductive layer 32 may be provided with connectionholes 30H, and the second electrode 23 that covers the reflector 30 maybe electrically coupled to the conductive layer 32 through theconnection hole 30H. The organic layer 22 may be disrupted in thevicinity of the connection hole 30H, and, for example, a portion of theorganic layer 22 may be locally attached to the conductive layer 32 atthe bottom of the connection hole 30H. The second electrode 23 may covera wall surface of the connection hole 30H along with a disrupted surface(end surface) of the organic layer 22, and may be provided continuouslyuntil reaching the bottom of the connection hole 30H. The secondelectrode 23 may wrap around the whole bottom of the connection hole 30Hto be in contact with the conductive layer 32. Each of the firstdielectric layer 33 and the second dielectric layer 34 may have anoverhanging structure in the vicinity of the connection hole 30H, andthe bottom of the connection hole 30H (in the vicinity of the conductivelayer 32) may be larger in size than an inlet thereof (in the vicinityof the first dielectric layer 33).

FIG. 6 and FIG. 7 respectively illustrate planar configurations of thefirst dielectric layer 33 and the second dielectric layer 34. Theconnection hole 30H may include a connection hole 33H of the firstdielectric layer 33 and a connection hole 34H of the second dielectriclayer 34. Each of the connection holes 33H and 34H may be, for example,in a circular shape, and the connection hole 33H of the first dielectriclayer 33 may be larger in size than the connection hole 34H of thesecond dielectric layer 34. In the display region 110A on the substrate11, along with those connection holes 33H and 34H, a plurality ofapertures 33E may be provided in the first dielectric layer 33, and aplurality of apertures 34E may be provided in the second dielectriclayer 34. Each of the apertures 33E and 34E may be, for example, in arectangular shape, and may be provided at a location overlapping withthe aperture 32E of the conductive layer 32, that is, the light-emittingsection 10. Each of the connection holes 33H and 34H may be provided aclearance between two adjacent light-emitting sections 10 in a rowdirection of the light-emitting sections 10, for example.

The connection holes 33H and 34H may be provided in all of clearancesbetween the light-emitting sections 10 that are adjacent to each otherin the row direction (FIG. 6 and FIG. 7), or may be provided in some ofthe clearances between the light-emitting sections 10 that are adjacentto each other in the row direction, as illustrated in FIG. 8 and FIG. 9.

Each of the first dielectric layer 33 and the second dielectric layer 34may be made of, for example, an inorganic material such as silicon oxide(SiO₂), silicon nitride (Si₃N₄), titanium oxide (TiO₂), zirconium oxide,aluminum oxide, zinc oxide, and indium oxide. A transparent(high-light-transmissive) insulating material may be preferably used foreach of the first dielectric layer 33 and the second dielectric layer34. A constituent material for the first dielectric layer 33 and aconstituent material for the second dielectric layer 34 may bepreferably subjected to dry etching under a predetermined condition atdifferent etching speed. Specifically, the constituent material for thefirst dielectric layer 33 may be etched faster than the constituentmaterial for the second dielectric layer 34. This makes it possible toform the connection holes 33H and 34H with different sizes. A refractiveindex (n34) of the second dielectric layer 34 may be preferably greaterthan a refractive index (n33) of the first dielectric layer 33(n34>n33). For example, the first dielectric layer 33 may be made ofsilicon oxide, and the second dielectric layer 34 may be made of siliconnitride.

The filler layer 40 between the substrate 11 and the sealing substrate60 may serve to prevent entry of moisture, and to enhance mechanicalstrength of the display unit 1. The filler layer 40 may have a lighttransmission rate of about 80%, and a thickness within a range of 3 μmto 20 μm both inclusive, for example. A material such as an epoxy resinor an acrylic resin may be usable for the filler layer 40. A refractiveindex (n40) of the filler layer 40 may be preferably greater than therefractive index (n34) of the second dielectric layer 34 (n40>n34).

A CF layer 50 may be provided on a surface that faces the substrate 11of the sealing substrate 60. The CF layer 50 may include, for example, ared-color filter (not illustrated), a green-color filter 50G, and ablue-color filter 50B, which are respectively disposed corresponding tothe red light-emitting section 10R, the green light-emitting section10G, and the blue light-emitting section 10B. Each of the red-colorfilter, the green-color filter 50G, and the blue-color filter 50B may bemade of a pigment-mixed resin, and may be adjusted by selecting thepigment to increase the light transmission rate at a target red, green,or blue wavelength band, and to decrease the light transmission rate atany other bands.

The CF layer 50 may be provided with, for example, a light-shieldingfilm that fills clearances between the color filters (the red-colorfilter, the green-color filter 50G, and the blue-color filter 50B). Thelight-shielding film may be configured of a black resin film withoptical density of 1 or more in which a black coloring agent is mixed,or a thin-film filter utilizing interference of a thin film. Inparticular, the configuration with use of the black resin film may bepreferable because this makes it possible to form the light-shieldingfilm more inexpensively and easily. The thin-film filter may beconfigured by stacking one or more thin films made of, for example,metal, metallic nitride, or metallic oxide to attenuate light utilizinginterference of the thin films. A specific example of the thin-filmfilter may be a filter that is configured by alternately stackingchromium (Cr) and chromium oxide (III) (Cr₂O₃).

The sealing substrate 60 may be located at a position on the secondelectrode 23 side of the light-emitting elements 20, and may serve toseal the light-emitting elements 20 along with an adhesion layer (notillustrated). The sealing substrate 60 may include a material such asglass that is transparent to the light that is generated by thelight-emitting elements 20.

FIG. 10 schematically illustrates a configuration of the light-emittingelements 20 and respective circuits that are coupled to thelight-emitting elements 20. In the peripheral region 110B of thesubstrate 11, for example, a signal line driving circuit 120 and a scanline driving circuit 130 that are both drivers for the image display maybe provided along with the common electrode 12C (FIG. 1), and thesedriving circuits may be coupled to the light-emitting elements 20 in thedisplay region 110A.

A pixel driving circuit 140 for driving of the light-emitting elements20 may be disposed along with the plurality of light-emitting elements20 in the display region 110A. In the pixel driving circuit 140, aplurality of signal lines 120A may be disposed in a column direction,and a plurality of scan lines 130A may be disposed in a row direction.One of the light-emitting elements 20 may be provided at an intersectionbetween each of the signal lines 120A and each of the scan lines 130A.Both ends of each of the signal lines 120A may be coupled to the signalline driving circuit 120, and both ends of each of the scan lines 130Amay be coupled to the scan line driving circuit 130.

The signal line driving circuit 120 may provide a signal voltage of animage signal corresponding to luminance information to be delivered froma signal supply source (not illustrated) to the light-emitting element20 that is selected through the signal line 120A. The scan line drivingcircuit 130 may include, for example, a shift register that shifts(transfers) start pulses sequentially in synchronization with incomingclock pulses. Upon writing the image signal to each of thelight-emitting elements 20, the scan line driving circuit 130 may scanthe light-emitting elements 20 row by row to provide scan signalssequentially to the scan lines 130A. A signal voltage from the signalline driving circuit 120 may be provided to each of the signal lines120A, and a scan signal from the scan line driving circuit 130 may beprovided to each of the scan lines 130A.

FIG. 11 illustrates an example of the pixel driving circuit 140. Thepixel driving circuit 140 may be, for example, an active-type drivingcircuit. Specifically, the pixel driving circuit 140 may include thedrive transistor Tr1 and the write transistor Tr2; a capacitor (storagecapacitor) Cs between the transistors Tr1 and Tr2; and thelight-emitting element 20 that is coupled in series to the drivetransistor Tr1 between a first power source line (Vcc) and a secondpower source line (GND). The first electrode 21 of the light-emittingelement 20 may be coupled to a source electrode of the drive transistorTr1, and the second electrode 22 of the light-emitting element 20 may becoupled to a common power source line (GND). Each of the drivetransistor Tr1 and the write transistor Tr2 may be configured of ageneral-use thin-film transistor. The configuration is not limitedspecifically, and, for example, an inversely-staggered structure(so-called bottom-gate type) and a staggered structure (so-calledtop-gate type) may be both applicable.

[Method of Manufacturing Display Unit 1]

The display unit 1 as described above may be manufactured in thefollowing manner, for example.

[Process of Forming TFT Layer 12 and Interlayer Insulating Film 13]

First, the TFT layer 12 is formed on the substrate 11 through apredetermined thin-film process. At this time, the drive transistor Tr1and the write transistor Tr2 are formed in the display region 110A ofthe substrate 11, and the common electrode 12C is formed in theperipheral region 110B. Next, the interlayer insulating film 13 isformed over a whole surface of the substrate 11 by, for example, a spincoating method or a slit coating method. Thereafter, the depositedinterlayer insulating film 13 is patterned in a predetermined shape by,for example, a lithography method to form the connection holes HG, HB,and HC.

[Process of Forming First Electrode 21]

After the TFT 20 is provided, the first electrode 21 is formed for eachof the light-emitting sections 10. The first electrode 21 may be formed,for example, by forming a film of an Al—Nd alloy over the whole surfaceof the substrate 11 by a spattering method, and thereafter pattering thefilm with use of, for example, a lithography method.

[Process of Forming Inter-Pixel Insulating Film 24]

Next, for example, a film of a polyimide-based resin is formed over thewhole surface of the substrate 11, and thereafter the film is patternedin a desired shape, thereby forming the inter-pixel insulating film 24in the display region 110A.

[Process of Forming Reflector 30]

Next, as illustrated in FIG. 12, the reflector 30 is formed on theinter-pixel insulating film 24. Specifically, first, for example, a filmof a resin material is formed over the whole surface of the substrate11, and thereafter the film is patterned, thereby forming the support 31in the display region 110A. Thereafter, for example, a film of silver isformed to cover the support 31, and then the film is patterned to formthe apertures (apertures 32E in FIG. 5). This leads to formation of theconductive layer 32. At this time, the film of silver is extended to theperipheral region 110B to be coupled to the connection hole HC. Next, afilm of the constituent material of the first dielectric layer 33 and afilm of the constituent material of the second dielectric layer 34 areformed on the conductive layer 32, and thereafter these films arepatterned to form, the apertures (apertures 33E and 34E illustrated inFIG. 6 and FIG. 7, respectively). This leads to formation of thereflector 30. The first dielectric layer 33 and the second dielectriclayer 34 are formed using a material with faster etching speed for thefirst dielectric layer 33 and using a material with slower etching speedfor the second dielectric layer 34 in dry etching under a predeterminedcondition.

After the reflector 30 is provided, the connection hole 30H is formed inthe second dielectric layer 34 and the first dielectric layer 33 of thereflector 30, as illustrated in FIG. 13. The connection hole 30H may beformed by carrying out patterning with use of, for example, aphotolithography method and dry etching. In the dry etching process, asdescribed above, the first dielectric layer 33 and the second dielectriclayer 34 are formed with use of materials having different etching speedin the dry etching under the predetermined condition, thereby forminglarger apertures (apertures 33E in FIG. 6) in on the first dielectriclayer 33, and forming smaller apertures (apertures 34E in FIG. 7) in thesecond dielectric layer 34.

[Process of Forming Organic Layer 22]

After the connection hole 30H is formed in the second dielectric layer34 and the first dielectric layer 33 of the reflector 30, the organiclayer 22 is formed in the display region 110A of the substrate 11, asillustrated in FIG. 14. The organic layer 22 may be formed using, forexample, a vacuum evaporation method. The vacuum evaporation method is amethod of evaporating a variety of materials on the substrate fromevaporation source. A pressure at the time of film formation may bepreferably 5×10⁻⁴ Pa or less. The organic layer 22 is formed on thereflector 30 and the first electrode 21. A portion of the organic layer22 may tap into the connection hole 30H of the reflector 30, and theorganic layer 22 may be attached to the conductive layer 32.

[Process of Forming Second Electrode 23]

After the organic layer 22 is provided, the second electrode 23 with athickness of 200 nm is formed using, for example, the vacuum evaporationmethod or a spattering method, as illustrated in FIG. 15. A pressure atthe time of film formation may be preferably 1×10⁻³ Pa or more, and maybe, for example, 0.3 Pa. At this time, the second electrode 23 iswrapped around a wider range than a range where the organic layer 22taps the second electrode 23 into the connection hole 30H of thereflector 30 to cause the second electrode 23 to come in contact withthe conductive layer 32 and be electrically coupled to the conductivelayer 32. The second electrode 23 may be formed utilizing, for example,a CVD (Chemical Vapor Deposition) method or an ALD (Atomic LayerDeposition) method.

[Process of Forming Sealing Substrate 60]

The CF layer may be formed on the sealing substrate 60 in the followingmanner, for example. First, a film of a constituent material of thelight-shielding film is formed over a whole surface of the sealingsubstrate 60, and thereafter the film is patterned in a matrix formusing, for example, a lithography process, thereby forming the pluralityof apertures corresponding to the arrangement of the light-emittingsections 10. This leads to formation of the light-shielding film. Next,the red-color filter, the green-color filter 50G, and the blue-colorfilter 50B are provided at the apertures of the light-shielding film bycarrying out patterning of these color filters sequentially. This leadsto formation of the CF layer 50.

[Process of Bonding Substrate 11 and Sealing Substrate 60]

The sealing substrate 60 that is formed in the above-described manner isbonded to the substrate 11 with the light-emitting elements 20, thereflector 30, and the filler layer 40 in between using, for example, anODF (One Drop Fill) process. All of the processes as described abovebring the display unit 1 to completion.

[Operation of Display Unit 1]

In the display unit 1, when a drive current corresponding to an imagesignal of each color is applied to each of the light-emitting elements20, electrons and holes are injected into the organic layer 22 throughthe first electrode 21 and the second electrode 23. The electrons andthe holes may be recombined in the light-emitting layer included in theorganic layer 22 to generate light. At least a portion of the light maybe reflected by the reflector 30, and may be transmitted through the CFlayer 50 and the sealing substrate 60 to be extracted to the outside. Insuch a manner, the full-color image display including, for example, R,G, and B colors may be performed in the display unit 1.

[Workings and Effects of Display Unit 1]

Here, in the display unit 1, the conductive layer 32 of the reflector 30is electrically coupled to the second electrode 23 of the light-emittingelement 20, which makes it possible to increase an amount of signalsflowing through the light-emitting element 20. Hereinafter, adescription is provided on such a matter.

In the organic EL display of an upward-lighting type (top-emissionmethod), a second electrode of a light-emitting element is made of atransparent conductive material, and light from an organic layer ismultiply reflected between a first electrode and the second electrode toextract the light from a second substrate (upper side) on the oppositeside of a first substrate. The transparent conductive material to beused as the second electrode typically has a higher resistance than aresistance of a metallic material. Therefore, a difference in the amountof signals flowing through the light-emitting element may be madedepending on a placement location of the light-emitting element, whichmay raise the possibility of deterioration in display performance. Anincrease in the film thickness of the second electrode leads to adecrease in the resistance of the second electrode; however, a visiblelight transmission rate of the second electrode may be degraded,resulting in deterioration in the light extraction efficiency of thelight-emitting element.

To reduce the influence of such a high resistance of the secondelectrode, a method of using an auxiliary wiring pattern may beconsidered. The auxiliary wiring pattern may be formed between theadjacent light-emitting sections, for example. It is possible to makemore signals flow through the second electrode by coupling the secondelectrode to a common electrode through the auxiliary wiring patternthat is configured of a metal material with low resistance, resulting inimproved display performance.

However, providing the auxiliary wiring pattern may narrow thelight-emitting section (aperture). In other words, the auxiliary wiringpattern may block the light extraction, raising the possibility ofdeterioration in the luminance. In particular, combined use of theauxiliary wiring pattern with a reflector may degrade an aperture ratesignificantly.

On the contrary, in the display unit 1, since the conductive layer 32 ofthe reflector 30 is electrically coupled to the second electrode 23 ofthe light-emitting element 20, the conductive layer 32 is utilizedtogether with the second electrode 23, and a signal such as a currentflows through the light-emitting element 20. The conductive layer 32 iselectrically coupled to the common electrode 12C, and a current flowsthrough the common electrode 12C from the second electrode 23 via theconductive layer 32. In other words, the reflector 30 of the displayunit 1 functions not only as a reflector, but also as an auxiliarywiring pattern. As described above, the display unit 1 eliminates thenecessity for providing the auxiliary wiring pattern apart from thereflector 30, which makes it possible to increase the amount of signalsflowing through the light-emitting elements 20 without causingdeterioration in the aperture rate. Therefore, in the display unit 1,the use of the reflector 30 makes it possible to improve extractionefficiency of the light that is generated by the light-emitting elements20, and to increase the amount of light emission of the light-emittingelements 20. That is, the display unit 1 allows for generation of lightwith increased power.

Further, the display unit 1 eliminates the necessity for providing theauxiliary wiring pattern apart from the reflector 30, which makes itpossible to simplify manufacturing processes, leading to reduction incosts.

As described above, in the present embodiment, the conductive layer 32of the reflector 30 is electrically coupled to the second electrode 23of the light-emitting element 20, which makes it possible to improve thelight extraction efficiency, as well as to make high-capacity signalsflow through the light-emitting elements 20. This allows for improvementin luminance.

Further, the display unit 1 suppresses reduction in the aperture rate asmentioned above, which allows for microfabrication of the light-emittingsections 10. In a micro-display, reduction in panel size is achievable,which makes it possible to improve manufacturing efficiency.

Moreover, a current flows through the common electrode 12C from thelight-emitting element 20 via the conductive layer 32 of the reflector30, and therefore no influence is exerted on a driving circuit even ifthe amount of such a current is large. This makes it possible to achieveuniform light emission inside the display region 110A.

In addition, the refractive index n34 of the second dielectric layer 34is made greater than the refractive index n33 of the first dielectriclayer 33, and the refractive index n40 of the filler layer 40 is madegreater than the refractive index n34 of the second dielectric layer 34(n33<n34<n40). As a result, the light that is generated by thelight-emitting elements 20 is totally reflected on a surface of thesecond dielectric layer 34. This makes it possible to further improvethe extraction efficiency of the light that is generated by thelight-emitting elements 20.

Hereinafter, a description is provided on modification examples of theabove-described embodiment, and any component parts essentially same asthose in the above-described embodiment are denoted with the samereference numerals, and related descriptions are omitted as appropriate.

Modification Example 1

FIG. 16 illustrates a planar configuration of a display unit (displayunit 1A) according to a modification example 1. FIG. 17 and FIG. 18respectively illustrate cross-sectional configurations taken along aline XVII-XYII and a line XVIII-XYIII illustrated in FIG. 16. In thedisplay unit 1A, the connection hole 30H may be provided at a differentposition from the position of the connection hole 30H in theabove-described display unit 1. With the exception of this point, thedisplay unit 1A has a configuration similar to the configuration of thedisplay unit 1, and the effects and workings thereof are also similar tothose of the display unit 1.

FIG. 19 and FIG. 20 respectively illustrate planar configurations of thefirst dielectric layer 33 and the second dielectric layer 34 of thereflector 30. The connection holes 33H and 34H may be respectivelyprovided at positions displaced from the apertures 33E and 34E in eitherof the row direction and the column direction. In other words, theconnection hole 30H that is configured of the connection holes 33H and34H may be disposed at a position displaced from the light-emittingsection 10 in either of the row direction and the column direction.

As illustrated in FIG. 21 and FIG. 22, the connection holes 33H may beprovided in clearances between the apertures 33E that are adjacent toeach other in the row direction, and the connection holes 34H may beprovided clearances between the apertures 34E that are adjacent to eachother in the row direction. Further, the connection holes 33H and 34Hmay be respectively provided at positions displaced from the apertures33E and 34E in either of the row direction and the column direction.

Modification Example 2

In a display unit (display unit 1B) according to a modification example2, the connection holes 30H for making a connection between theconductive layer 32 of the reflector 30 and the second electrode 23 ofthe light-emitting element 20 may be provided in clearances between thelight-emitting sections 10 that are adjacent to each other in the columndirection. With the exception of this point, the display unit 1B has aconfiguration similar to the configuration of the display unit 1, andthe effects and workings thereof are also similar to those of thedisplay unit 1.

FIG. 23 and FIG. 24 respectively illustrate planar configurations of thefirst dielectric layer 33 and the second dielectric layer 34 in thedisplay unit 1B. The connection holes 33H may be provided in clearancesbetween the apertures 33E that are adjacent to each other in the columndirection, and the connection holes 34H may be provided in clearancesbetween the apertures 34E that are adjacent to each other in the columndirection. In other words, the connection holes 30H that are eachconfigured of the connection holes 33H and 34H may be disposed inclearances between the light-emitting sections 10 that are adjacent toeach other in the column direction.

The connection holes 33H and 34H may be provided in all of theclearances between the light-emitting sections 10 that are adjacent toeach other in the column direction (FIG. 23 and FIG. 24), or may beprovided in some of the clearances between the light-emitting sections10 that are adjacent to each other in the row direction, as illustratedin FIG. 25 and FIG. 26. Alternatively, the connection holes 33H and 34Hmay be provided in clearances between the light-emitting sections 10that are adjacent to each other in the column direction and inclearances between the light-emitting sections 10 that are adjacent toeach other in the row direction.

Modification Example 3

FIG. 27 illustrates a cross-sectional configuration of a main portion ofa display unit (display unit 1C) according to a modification example 3.In the display unit 1C, the reflector 30 may be configured of a stackedstructure that includes the support 31, the conductive layer 32, and thefirst dielectric layer 32, and a second dielectric layer (for example,the second dielectric layer 33 in FIG. 3) may be not provided. With theexception of this point, the display unit 1C has a configuration similarto the configuration of the display unit 1, and the effects and workingsthereof are also similar to those of the display unit 1.

In the display unit 1C, the connection hole 30H for making a connectionbetween the conductive layer 32 of the reflector 30 and the secondelectrode 23 of the light-emitting element 20 may be provided at thefirst dielectric layer 32. As with the connection hole 30H described inthe display unit 1, the connection hole 30H may preferably have a bottomthat is larger in size than an inlet thereof.

Modification Example 4

FIG. 28 illustrates a cross-sectional configuration of a main portion ofa display unit (display unit 1D) according to a modification example 4.In the display unit 1D, the reflector 30 may be configured of a stackedstructure that includes the conductive layer 32 and the first dielectriclayer 33, and a support (for example, the support 31 in FIG. 3) and asecond dielectric layer (for example, the second dielectric layer 33 inFIG. 3) may be not provided. With the exception of this point, thedisplay unit 1D has a configuration similar to the configuration of thedisplay unit 1, and the effects and workings thereof are also similar tothose of the display unit 1.

In the reflector 30 of the display unit 1D, a cross-sectional surfacethe conductive layer 32 may be shaped to have a tapered form. Forexample, a thickness (width) of the conductive layer 32 may becomelarger at a position closer to the inter-layer insulating film 24, andmay become smaller as the conductive layer 32 comes closer to thesealing substrate 60. As with the connection hole 30H described in thedisplay unit 1, the connection hole 30H that is provided on the firstdielectric layer 33 may preferably have a bottom that is larger in sizethan an inlet thereof. The reflector 30 may be configured by stackingthe first dielectric layer 33 and the second dielectric layer on theconductive layer 32 having the tapered cross-sectional surface (notillustrated).

Application Examples

A description is provided on application examples of any of the displayunits according to the above-described embodiment and the modificationexamples thereof. Any of the display units according to theabove-described embodiment and the modification examples thereof(display units 1, 1A, 1B, 1C, and 1D) may be applicable to electronicapparatuses in every field, such as a television, a digital camera, anotebook personal computer, a mobile terminal including a mobile phoneand a smartphone, and a video camera. In other words, any of thesedisplay units may be applicable to electronic apparatuses in every fieldthat display image signals to be input externally or internallygenerated image signals as images or video pictures.

For example, FIG. 29 illustrates an external appearance of a televisionto which any of the display units according to the above-describedembodiment and the modification examples thereof is applied. Thistelevision may have, for example, an image display screen section 300including a front panel 310 and a filter glass 320. The image displayscreen section 300 is configured of any of the display units accordingto the above-described embodiment and the modification examples thereof.

The present technology is described thus far with reference to theembodiment and modification examples thereof; however, the presenttechnology is not limited to the above-described embodiment and themodification examples thereof, but various modifications may be made.

For example, in the above-described embodiment and the modificationexamples thereof, the description is provided by citing specificexamples of configurations of the display units 1, 1A, 1B, 1C, and 1D.However, any of the display units 1, 1A, 1B, 1C, and 1D is not limitedto the display unit that includes all of the illustrated componentparts, and may include any other component parts. Some of the componentparts may be replaced with any other component part.

Further, the material and thickness of each layer, or film formationmethods and conditions, and any other conditions are not limited tothose mentioned in the above-described embodiment and the modificationexamples thereof, and any other materials and thicknesses, or any otherfilm formation methods and conditions may be permitted.

Moreover, in the above-described embodiment and the modificationexamples thereof, the description is provided on a case where theconnection holes 33H and 34H are provided in the first dielectric layer33 and the second dielectric layer 34 of the reflector 30, respectively.However, as illustrated in FIG. 30 and FIG. 31, connection grooves 33Sand 34S that extend in the column direction may be provided in the firstdielectric layer 33 and the second dielectric layer 34, respectively.Alternatively, the connection grooves 33S and 34S may extend in the rowdirection (not illustrated). When the connection grooves 33S and 34S areprovided, the conductive layer 32 of the reflector 30 and the secondelectrode 23 of the light-emitting element 20 may be coupled to eachother through the connection grooves.

In addition, in the above-described embodiment and the modificationexamples thereof, the description is provided on a case where theorganic layer 22 is provided common to all of the light-emittingelements 20; however, a portion or the entirety of the organic layer 22may be provided for each of the light-emitting elements 20.

It is to be noted that the effects described herein are merelyillustrative and non-limiting, and effects achieved by the presenttechnology may be effects other than those described above.

It is to be noted that the present technology may be configured asfollows.

(1)

A display unit, including:

a light-emitting section including a light-emitting element that has afirst electrode, an organic layer including a light-emitting layer, anda second electrode in this order; and

a reflector that is provided at a periphery of the light-emittingsection to reflect light from the light-emitting section, and has aconductive layer, the conductive layer being electrically coupled to thesecond electrode of the light-emitting element.

(2)

The display unit according to (1), further including:

a substrate having a display region and a peripheral region, the displayregion in which the light-emitting element and the reflector areprovided, and the peripheral region being disposed outside the displayregion;

a common electrode that is provided in the peripheral region of thesubstrate,

wherein the conductive layer of the reflector extends to the peripheralregion to be electrically coupled to the common electrode.

(3)

The display unit according to (1) or (2), wherein the reflector includesa dielectric layer that is stacked on the conductive layer.

(4)

The display unit according to (3), wherein

the light-emitting element includes a plurality of light-emittingelements, and

the light-emitting layer and the second electrode of the light-emittingelement are provided common to the plurality of light-emitting elementsto cover the reflector.

(5)

The display unit according to (4), wherein the second electrode of thelight-emitting element is electrically coupled to the conductive layerthrough a connection hole that is provided in the dielectric layer.

(6)

The display unit according to (5), wherein a bottom of the connectionhole is larger in size than an inlet of the connection hole.

(7)

The display unit according to (6), wherein the dielectric layer includesa first dielectric layer and a second dielectric layer that havedifferent etching speed in dry etching under a predetermined condition.

(8)

The display unit according to (7), wherein the reflector has abulkhead-shaped support surrounding the light-emitting section, and theconductive layer, the first dielectric layer, and the second dielectriclayer are stacked on the support in this order.

(9)

The display unit according to (8), wherein the connection hole isconfigured of a first connection hole and a second connection hole, thefirst connection hole being provided in the first dielectric layer, andthe second connection hole being provided in the second dielectric layerand being smaller than the first connection hole.

(10)

The display unit according to any one of (6) to (9), wherein, in theconnection hole, the organic layer is attached to the conductive layer,and the second electrode is in contact with the conductive layer aroundthe organic layer attached to the conductive layer.

(11)

The display unit according to any one of (5) to (10), wherein

the light-emitting section comprises a plurality of light-emittingsections disposed in a matrix pattern, and

the connection hole of the dielectric layer is provided in each ofclearances between the light-emitting sections that are adjacent to eachother in a row direction or a column direction or both.

(12)

The display unit according to any one of (5) to (10), wherein

the light-emitting section comprises a plurality of light-emittingsections disposed in a matrix pattern, and

the connection hole of the dielectric layer is provided at a positiondisplaced from each of the light-emitting section in either of a rowdirection and a column direction.

(13)

The display unit according to (7), wherein the light-emitting sectionand the reflector are covered with a filler.

(14)

The display unit according to (13), wherein a refractive index of thefiller is greater than a refractive index of the second dielectriclayer, and the refractive index of the second dielectric layer isgreater than a refractive index of the first dielectric layer.

(15)

The display unit according to any one of (1) to (14), wherein theconductive layer includes silver or aluminum or both.

(16)

An electronic apparatus provided with a display unit, the display unitincluding:

a light-emitting section including a light-emitting element that has afirst electrode, an organic layer including a light-emitting layer, anda second electrode in this order; and

a reflector that is provided at a periphery of the light-emittingsection to reflect light from the light-emitting section, and has aconductive layer, the conductive layer being electrically coupled to thesecond electrode of the light-emitting element.

This application claims the priority on the basis of Japanese PatentApplication No. 2014-166662 filed on Aug. 19, 2014 in Japan PatentOffice, the entire contents of which are incorporated in thisapplication by reference.

Those skilled in the art could assume various modifications,combinations, subcombinations, and changes in accordance with designrequirements and other contributing factors. However, it is understoodthat they are included within a scope of the attached claims or theequivalents thereof.

What is claimed is:
 1. A display unit, comprising: an insulating film; adisplay region that includes: a plurality of light-emitting sectionsincluding a plurality of light-emitting elements on the insulating film,wherein the light-emitting element includes a first electrode and anorganic layer, and a second electrode in this order, and the organiclayer includes a light-emitting layer; a protruding portion protrudestoward a light emitting direction between the light-emitting sections,and a reflective layer on the protruding portion, wherein the reflectivelayer is between the light-emitting sections, the reflective layerreflects light emitted from the light-emitting element, and thereflective layer includes an electric conductive material; and aperipheral region that includes a common electrode, wherein thereflective layer electrically connects to the common electrode in theperipheral region, and the peripheral region is outside the displayregion.
 2. The display unit according to claim 1, further comprising asubstrate that includes the display region and the peripheral region. 3.The display unit according to claim 2, wherein the reflective layer isset a same electric potential with a second electrode.
 4. The displayunit according to claim 3, wherein the reflective layer is coupled tothe second electrode.
 5. The display unit according to claim 4, whereinthe reflective layer and the second electrode is different layer eachother.
 6. The display unit according to claim 2, wherein a top surfaceof the protruding portion is a flat surface.
 7. The display unitaccording to claim 6, wherein a first dielectric layer stacked on thereflective layer.
 8. The display unit according to claim 7, wherein thelight-emitting element further comprises a plurality ofsub-light-emitting elements, the light-emitting layer and the secondelectrode of the light-emitting element are common to the plurality ofsub-light-emitting elements, and the light-emitting layer and the secondelectrode cover the reflective layer.
 9. The display unit according toclaim 8, wherein the second electrode of the light-emitting element iselectrically coupled to the reflective layer through a second connectionhole, and the second connection hole is in the first dielectric layer.10. The display unit according to claim 8, wherein a bottom of thesecond connection hole is larger in size than an inlet of the secondconnection hole.
 11. The display unit according to claim 10, wherein thefirst dielectric layer includes a second dielectric layer and a thirddielectric layer, and a first etching speed of a dry etching processcorresponding to the second dielectric layer is different from a secondetching speed of the dry etching process corresponding to the thirddielectric layer.
 12. The display unit according to claim 11, whereinthe reflective layer further comprises a bulkhead-shaped support thatsurrounds the light-emitting section, and the reflective layer, thesecond dielectric layer, and the third dielectric layer are stacked in asecond arrangement order on the bulkhead-shaped support.
 13. The displayunit according to claim 12, wherein the light-emitting section furthercomprises a plurality of sub-light-emitting sections in a matrixpattern, and the second connection hole of the first dielectric layer isat a position displaced from each of the plurality of sub-light-emittingsections in one of a row direction of the matrix pattern or a columndirection of the matrix pattern.
 14. The display unit according to claim13, wherein each of the light-emitting section and the reflective layeris covered with a filler.
 15. The display unit according to claim 14,wherein a first refractive index of the filler is greater than a secondrefractive index of the third dielectric layer, and the secondrefractive index of the third dielectric layer is greater than a thirdrefractive index of the second dielectric layer.
 16. The display unitaccording to claim 15, wherein the reflective layer includes at leastone of silver or aluminum.
 17. An electronic apparatus, comprising: adisplay unit that comprises: an insulating film; a display region thatincludes: a plurality of light-emitting sections including a pluralityof light-emitting elements on the insulating film, wherein thelight-emitting element includes a first electrode, an organic layer, anda second electrode in this order, and the organic layer includes alight-emitting layer; a protruding portion protrudes toward lightemitting direction between the light-emitting sections, and a reflectivelayer on the protruding portion protruding to a light emittingdirection, wherein the reflective layer is between the light-emittingsections, the reflective layer reflects light emitted from thelight-emitting element, and the reflective layer includes a conductivematerial; and a peripheral region that includes a common electrode,wherein the reflective layer is extended towards the peripheral regionsuch that the reflective layer electrically connects to the commonelectrode in the peripheral region, and the peripheral region is outsidethe display region.
 18. The electronic apparatus according to claim 17,wherein the reflective layer is set a same electric potential with asecond electrode.
 19. The electronic apparatus according to claim 18,wherein the reflective layer is coupled to the second electrode.
 20. Theelectronic apparatus according to claim 19, wherein the reflective layerand the second electrode is different layer each other.